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HIGH-QUALITY SURFACE PASSIVATION OBTAINED BY HIGH-RATE DEPOSITED SILICON NITRIDE, SILICON DIOXIDE AND AMORPHOUS SILICON USING THE VERSATILE EXPANDING THERMAL PLASMA TECHNIQUE

机译：利用多功能扩展热等离子体技术获得高质量沉积的氮化硅，二氧化硅和非晶硅获得的高质量表面钝化

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1. Industrial High-rate (~5nm/s) Deposited Silicon Nitride Yielding High-quality Bulk and Surface Passivation under Optimum Anti-reflection Coating Conditions [J] . B. Hoex, A. J. M. van Erven, R. C. M. Bosch Progress in photovoltaics . 2005,第8期

机译：在最佳减反射涂层条件下，工业高速（〜5nm / s）沉积氮化硅可产生高质量的块状和表面钝化
2. High-quality Surface Passivation of Silicon Solar Cells in an Industrial-type Inline Plasma Silicon Nitride Deposition System [J] . Jens D. Moschner, Jurgen Henze, Jan Schmidt Progress in photovoltaics . 2004,第1期

机译：工业型串联等离子体氮化硅沉积系统中硅太阳能电池的高质量表面钝化
3. Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide [J] . Ge Jia, Tang Muzhi, Wong Johnson, International Journal of Photoenergy . 2014,第Pta3期

机译：工业电感耦合等离子体沉积氢化本征非晶硅氧化物可实现出色的硅表面钝化
4. High-Quality Surface Passivation Obtained by High-Rate Deposited Silicon Nitride, Silicon Dioxide and Amorphous Silicon using the Versatile Expanding Thermal Plasma Technique [C] . B. Hoex, F.J.J. Peeters, A.J.M van Erven, . 2006

机译：使用多功能膨胀热等离子体技术通过高速率沉积的氮化硅，二氧化硅和非晶硅获得高质量的表面钝化
5. A magnetic resonance investigation of trivalent silicon centers in amorphous silicon dioxide and amorphous silicon nitride. [D] . Warren, William Leo. 1990

机译：非晶态二氧化硅和非晶态氮化硅中三价硅中心的磁共振研究。
6. Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System [O] . Xiao-Ying Zhang, Chia-Hsun Hsu, Shui-Yang Lien, 2017

机译：利用远程等离子体原子层沉积系统沉积的HfO2薄膜对硅进行表面钝化
7. Industrial high-rate (~ 5 nm/s) deposited silicon nitride yielding high-quality bulk and surface passivation under optimum anti-reflection coating conditions [O] . Hoex B Bram, Erven van AJM, Bosch RCM Roeland, 2005

机译：工业高速（〜5 nm / s）沉积的氮化硅在最佳的减反射涂层条件下产生高质量的体积和表面钝化
8. Effective passivation of the low resistivity silicon surface by a rapid thermal oxide/PECVD silicon nitride stack and its application to passivated rear and bifacial Si solar cells [R] . Rohatgi, A. , Narasimha, S. , Ruby, D. S. 1998

机译：通过快速热氧化物/ pECVD氮化硅叠层有效钝化低电阻率硅表面及其在钝化后部和双面si太阳能电池中的应用

HIGH-QUALITY SURFACE PASSIVATION OBTAINED BY HIGH-RATE DEPOSITED SILICON NITRIDE, SILICON DIOXIDE AND AMORPHOUS SILICON USING THE VERSATILE EXPANDING THERMAL PLASMA TECHNIQUE

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